Design of a ternary memory cell using cntfets

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August undefined, 2024

WebThis paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional … WebA memory cell is designed for the construction of a ternary random-access-memory array (TRAM). A ternary decoder and encoder are presented to be the elements of a complete ternary read-only memory (TROM). A modified ternary inverter (MTI) is taken as a unit cell of the ternary memory matrix.

A CNTFET Based Bit-Line Powered Stable SRAM Design for Low …

WebJun 1, 2016 · This paper has initially presented two ternary CNTFET SRAMs based on a previously suggested standard ternary inverter. Sizing has been performed by grouping … WebThe research of ternary logic can be roughly divided into three aspects: mathematical theory, ternary logic devices and basic logic circuits,and the applied research on ternary logic.The theoretical study of ternary logic contains various theorems and logical systems, providing the theoretical basis for the latter two pieces of research. ctbcwebex.ctbcbank.com

Linbin Chen - Design Verification Engineer - Cirrus …

WebJun 2015. Here the I2C IP core for intercommunication bus is designed using SystemVerilog & UVM for multi-master slave communication in full duplex mode.The verification environment is created using SystemVerilog constructors & UVM base classes.The DUT has been verified for all possible configurations which are: Master Tx, … WebFeb 22, 2024 · A TCAM cell with an optimized CNTFET is proposed in this paper. The TCAM cell proposed is designed for improved performance using optimized CNTFET … ctbc 中國信託 ecash

Design of Ternary Content-Addressable Memory Using CNTFET

WebThis paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional binary logic because it allows simplicity and energy efficiency in modern digital design due to the reduced circuit overhead in interconnects and chip area. WebThis paper presents a novel design of ternary Static Read Access Memory (SRAM) using Carbon Nano-tube Field Effect Transistors (CNTFETs). Advantages of CNTFET technology along with a brief discussion on Stanford university model of CNTFET used for simulation of SRAM are discussed. earring styles 2021WebThis paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional … earrings uk online

"WebMay 2, 2013 · By using four additional CNTFETs for ternary operation, a conventional (two-valued) sense amplifier is then used for output response. The contribution of this paper is … " - Design of a ternary memory cell using cntfets

Design of a ternary memory cell using cntfets

WebApr 7, 2024 · However, the increased charge mobility also enhances the leakage power. This work uses CNTFET for designing a low-power eight-transistor static random access memory (8T SRAM) cell. The leakage power of the proposed cell is reduced by 2.21 × compared to conventional 6T SRAM at 0.3 V with similar CNTFET parameters. WebWith the miniaturization of digital integrated circuits, electronic systems with increased functionality and enhanced performance are preferred. Multi-valued logic design is a promising alternative that offers a higher number of data/information which ...

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WebApr 24, 2024 · Using carbon nanotube field effect transistors, (CNTFETs) the MVL gates are made which use N-type CNTFETs without utilizing any resistor. Thus this work helps both ternary and also quaternary logic gates exploiting the threshold voltages of both P and N type transistors. WebThis paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional …

WebThis paper presents a design of a 3VL memory cell using carbon nano-tube field-effect transistors (CNTFETs). 3VL is a promising alternative to conventional binary logic, as it has better performance in terms of area, power and also reduces interconnect delay. This cell uses a control gate for the write and read operation to make them separate. WebOct 26, 2024 · The ternary logic is observed to be a better alternative to the traditional binary logic because it offers faster computations, smaller chip area, and lesser interconnects. Thus, it allows designing the low-complex, high-speed, and energy-efficient circuits in future digital design.

WebIn addition, resistive random access memory (RRAM) is also a feasible option for the design of MVL circuits, owing to its multilevel cell capability that enables the storage of multiple resistance states within a single cell. In this manuscript, a design approach for ternary combinational logic circuits while using CNTFETs and RRAM is presented. WebJan 1, 2024 · A ternary content-addressable memory cell using carbon nanotube field-effect transistors (CNTFETs) is presented in this paper. The proposed ternary CAM cell …

WebSep 1, 2012 · This paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional binary logic because it allows simplicity and energy efficiency in modern digital design due to the reduced circuit overhead in interconnects and chip area.

WebApr 7, 2024 · However, the increased charge mobility also enhances the leakage power. This work uses CNTFET for designing a low-power eight-transistor static random access … ctbc websiteWebJan 1, 2024 · In this paper, a robust ternary SRAM (TSRAM) cell is designed using a novel ternary C-element based on carbon nanotube field-effect transistors (CNTFETs). … earrings unusualWebThe CNTFET used for design has different threshold voltages to achieve ternary logic. This multi threshold voltage is obtained by varying the diameter of the CNT used. Chirality of the CNTFETs is utilized for varying the diameter of the CNT and it also avoids the usage of additional power supplies. The channel length used here is 18nm wide. earring sublimation templateWebThis paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional … earrings uk goldWebSep 1, 2012 · This paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to … ctbd-33WebCarbon nanotube-based transistors (CNTFETs) have been shown to exhibit ambipolar field-effect transistor behavior, allowing circuit designers to easily choose between n - and p-conduction channels by applying correct voltages at a polarity gate.In this paper, we explore this ambipolar behavior of the CNTFET to design both binary and ternary content … earring suppliesWebJan 1, 2024 · This paper proposes a novel SEU-hardened ternary SRAM (TSRAM) cell based on an efficient ternary C-element (TC-element). The proposed design uses one supply voltage and dual-threshold CNTFETs, while the previous CNTFET-based TSRAMs need three different threshold voltages or two supply voltages. ctbc 中國信託 atm